Comparison of technology and laser properties of epitaxially grown 1.06 um and eye safe microchip laser

Krzysztof Kopczynski; Jerzy Sarnecki; Jarosław Mlynczak; Zygmunt Mierczyk; Jerzy Skwarcz

doi:10.1117/12.623306

11 October 2005 Comparison of technology and laser properties of epitaxially grown 1.06 μm and eye safe microchip laser

Krzysztof Kopczynski, Jerzy Sarnecki, Jarosław Mlynczak, Zygmunt Mierczyk, Jerzy Skwarcz

Proceedings Volume 5958, Lasers and Applications; 59582E (2005) https://doi.org/10.1117/12.623306
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

Most of the work on passively Q-switched microchip lasers emitting at 1064 nm has been done with neodymium-doped YAG crystals as gain material and Cr⁴⁺:YAG as saturable absorber. The bulk Cr⁴⁺:GGG Czochralski grown passive Q-switches were also investigated. We have used a technique of liquid phase epitaxy (LPE) to grow Cr⁴⁺:YAG, Cr⁴⁺:GGG and Co²⁺:YAG thin films of saturable absorber. X-ray diffraction analysis, optical transmission spectra measurements and passive Q-switching experiments were performed to characterize the obtained layers. Absorption saturation measurements of Cr⁴⁺:YAG, Cr⁴⁺:GGG and Co²⁺:YAG layers were carried out at 1.06 μm and 1.54 μm, respectively.

Citation Download Citation

Krzysztof Kopczynski, Jerzy Sarnecki, Jarosław Mlynczak, Zygmunt Mierczyk, and Jerzy Skwarcz "Comparison of technology and laser properties of epitaxially grown 1.06 μm and eye safe microchip laser", Proc. SPIE 5958, Lasers and Applications, 59582E (11 October 2005); https://doi.org/10.1117/12.623306

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