Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

F. Szmulowicz; H. J. Haugan; G. J. Brown; K. Mahalingam; B. Ullrich; S. R. Munshi; L. Grazulis

doi:10.1117/12.622219

29 September 2005 Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

F. Szmulowicz, H. J. Haugan, G. J. Brown, K. Mahalingam, B. Ullrich, S. R. Munshi, L. Grazulis

Author Affiliations +

Proceedings Volume 5957, Infrared Photoelectronics; 595708 (2005) https://doi.org/10.1117/12.622219
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

The effect of interface anisotropy on the electronic structure of InAs/GaSb type-II superlattices is exploited in the design of thin-layer superlattices for mid-IR detection threshold. The design is based on a theoretical envelope function model that incorporates the change of anion and cation species across InAs/GaSb interfaces, in particular, across the preferred InSb interface. The model predicts that a given threshold can be reached for a range of superlattice periods with InAs and GaSb layers as thin as a few monolayers. The model also predicts that the absorbance for the 4 micron superlattices is inversely proportional to their period so that smaller period superlattices can be grown proportionately thinner. An added advantage of thin-period superlattices is a smaller hole mass and a lower Auger recombination rate, which should lead to higher detector operating temperatures. A number of superlattices with periods ranging from 50.6 to 21.2 Å for the 4 μm detection threshold were grown by molecular beam epitaxy based on the model design. Low temperature photoluminescence and photoresponse spectra confirmed that the superlattice band gaps remained constant at 330 meV although the period changed by the factor of 2.5. Overall, the present study points to the importance of interfaces as a tool in the design and growth of thin superlattices for mid-IR detectors for room temperature operation.

Citation Download Citation

F. Szmulowicz, H. J. Haugan, G. J. Brown, K. Mahalingam, B. Ullrich, S. R. Munshi, and L. Grazulis "Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors", Proc. SPIE 5957, Infrared Photoelectronics, 595708 (29 September 2005); https://doi.org/10.1117/12.622219

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Stereolithography

Indium arsenide

Interfaces

Laser sintering

Iterated function systems

Superlattices

Gallium antimonide

Show All Keywords

Keywords/Phrases

Search In:

Publication Years