Prediction of etch profile and CD variation due to dry etch using TRAVIT software tool

S. Babin; K. Bay; S. Okulovsky

doi:10.1117/12.617070

28 June 2005 Prediction of etch profile and CD variation due to dry etch using TRAVIT software tool

S. Babin, K. Bay, S. Okulovsky

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617070
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

Predicting variations of critical dimensions (CDs) during a dry etching process is highly desirable in order to reduce cost and shorten fabrication time. Microloading and macroloading effects contribute to CD variation. Variation of pattern density and plasma distribution over the photomask are the main reasons for variation of etch rates. Pattern dependent error is the most important. TRAVIT is a dry etch simulation tool that has been developed to simulate etch profiles, etched linewidths, and CD variations resulting from dry etching. The software takes a GDSII pattern and determines if the CD variation is within the prescribed tolerance or if the pattern needs additional correction, and to what degree. In this way, an expensive writing of a high end mask, its dry etch, and metrology can be replaced by a simulation to avoid actual fabrication of a mask. Examples of simulations including variable ICP power, physical and chemical etch components, and optimization of a sidewall, bias, and CD variation are presented.

Citation Download Citation

S. Babin, K. Bay, and S. Okulovsky "Prediction of etch profile and CD variation due to dry etch using TRAVIT software tool", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617070

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KEYWORDS

Etching

Critical dimension metrology

Dry etching

Monte Carlo methods

Photomasks

Metrology

Inspection

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