B-FeSi2 cluster formation on and in silicon: morphology, electrical and optical properties

N. G. Galkin; D. L. Goroshko; V. O. Polyarnyi; A. S. Gouralnik; I. V. Louchaninov; V. V. Ole'nik; A. V. Novikov

doi:10.1117/12.634477

8 June 2005 B-FeSi₂ cluster formation on and in silicon: morphology, electrical and optical properties

N. G. Galkin, D. L. Goroshko, V. O. Polyarnyi, A. S. Gouralnik, I. V. Louchaninov, V. V. Ole'nik, A. V. Novikov

Proceedings Volume 5851, Fundamental Problems of Optoelectronics and Microelectronics II; (2005) https://doi.org/10.1117/12.634477
Event: Fundamental Problems of Optoelectronics and Microelectronics II, 2004, Khabrovsk, Russian Federation

Abstract

Processes of β-FeSi₂ nanosize islands growth on Si(111)7x7 surface and Si(111)-Cr surface phases (SP) and silicon overgrowth atop β-FeSi₂ nanosize islands have been studied by LEED, in situ Hall temperature measurements and ex situ AFM and optical spectrscopy methods. It was established, that Si(111)7x7-Cr surface phase appears the influence on β-FeSi₂ island orientation and crystalline structure, but island density does not change as compared with Si(111)7x7 surface. It was shown that Si(111)√3x√3/30°-Cr SP results in reduction of iron disilicide island density and their repeated nucleation on the free modified silicon surface. The optimal growth temperature (800 °C) for molecular beam epitaxy (MBE) of silicon layer atop of β-FeSi₂ nanosize islands on different substrate has been determined. It was revealed, that iron disilicide clusters, grown on Si(111)7x7-Cr surface phase, appear the minimal influence on crystal structure of the silicon layer. It was observed the closed concurrence of electric parameters of silicon with buried iron disilicide clusters and atomically clean silicon that testifies to the minimal carrier scattering on these clusters and can confirm them epitaxial burying in the silicon crystal lattice. From optical spectrscopy data two direct interband transitions at 0.75 eV and 1.10 eV were observed in silcon samples with buried β-FeSi₂ nanosize clusters.

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N. G. Galkin, D. L. Goroshko, V. O. Polyarnyi, A. S. Gouralnik, I. V. Louchaninov, V. V. Ole'nik, and A. V. Novikov "B-FeSi₂ cluster formation on and in silicon: morphology, electrical and optical properties", Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); https://doi.org/10.1117/12.634477

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KEYWORDS

Silicon

Iron

Silicon films

Surface plasmons

Crystals

Temperature metrology

Atomic force microscopy

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