Noise behavior of a PNP- and NPN-type SiGe HBT: a simulation study

B. Neinhues; C. Jungemann; B. Meinerzhagen

doi:10.1117/12.609452

23 May 2005 Noise behavior of a PNP- and NPN-type SiGe HBT: a simulation study

B. Neinhues, C. Jungemann, B. Meinerzhagen

Proceedings Volume 5844, Noise in Devices and Circuits III; (2005) https://doi.org/10.1117/12.609452
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States

Abstract

The noise performance of PNP and NPN SiGe structures is examined by an experimentally verified hydrodynamic (HD) noise model. This model is a hierarchical numerical noise model because all noise parameters required by this model are generated by full band Monte Carlo bulk simulations leading to the methodology of the hierarchical numerical noise simulation. The hierarchical HD noise model is applied to compare the performance of NPN and PNP SiGe HBTs. The simulations include AC, DC and noise characteristics like the minimum noise figure. A similar noise performance for both types of devices is found.

Citation Download Citation

B. Neinhues, C. Jungemann, and B. Meinerzhagen "Noise behavior of a PNP- and NPN-type SiGe HBT: a simulation study", Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); https://doi.org/10.1117/12.609452

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