Epitaxial photosensitive Pb1-xSnxSe(In)/PbSe1-xSx heterojunctions obtained in the ultrahigh vacuum

Eldar Yu. Salaev; A. M. Nazarov; S. I. Gadjieva

doi:10.1117/12.628673

7 June 2005 Epitaxial photosensitive Pb_1-xSn_xSe(In)/PbSe_1-xS_x heterojunctions obtained in the ultrahigh vacuum

Eldar Yu. Salaev, A. M. Nazarov, S. I. Gadjieva

Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628673
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation

Abstract

Photosensitive isoperiodical heterojunctions (HJ) Pb_1-xSn_xSe(In)/PbSe_1-xS_x were obtained in the ultrahigh vacuum (≤3÷5•10^-7 Pa) at quasi-equilibrium conditions by the method of the "hot wall" in the unified technological cycle on substrates BaF₂. In structural relation HJ components are ideally coordinated pair for the epitaxy. Volt-ampere and spectral characteristics of the HJ were recorded. Straight branch of the volt-ampere characteristics satisfies to the exponential law J=J₀exp (eU/βκT) at small displacements. At 77 K the coefficient β changes in the interval 1.5÷2 that is typical for the generation-recombination mechanism of the current leakage through the region of the space charge. Maximum photosensitivity was observed at λ_max=12.0 μm. The increase of the temperature ofthe HJ manufacture leads to the shift of the photosensitivity maximum to the short-wave region that is explained by the noticeable tin diffusion from the ground layer to the growing layer and as a result the HJ acquires characteristics of the varyzone structure.

Citation Download Citation

Eldar Yu. Salaev, A. M. Nazarov, and S. I. Gadjieva "Epitaxial photosensitive Pb_1-xSn_xSe(In)/PbSe_1-xS_x heterojunctions obtained in the ultrahigh vacuum", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628673

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