New structure of photoreceivers for optic communications

Valerian V. Dorogan; Tatiana S. Vieru; Andrei V. Dorogan

doi:10.1117/12.612195

21 February 2005 New structure of photoreceivers for optic communications

Valerian V. Dorogan, Tatiana S. Vieru, Andrei V. Dorogan

Proceedings Volume 5822, Information Technologies 2004; (2005) https://doi.org/10.1117/12.612195
Event: Information Technologies 2004, 2004, Chisinau, Moldova

Abstract

New p-i-n photodiodes on the basis of InP-InGaAs-InGaAsP heterostructures for optic communications, possessing original characteristics, are presented in the paper. Their specific photosensibility was achieved by placing the p-n junction in InGaAsP frontal layer near the interface with InGaAs active layer. The photosensibility of realized photodiodes can be controlled in spectral range 1.3-1.6 μm by reverse voltage. For reverse voltage less than a threshold one U_rev < U_thr between frontal and active layers there is a potential barrier of about 0.4 eV for holes generated in active layer and they don’t participate in photocurrent. For voltage U_rev > U_thr the boundary of space charge region extends into the InGaAs active layer and the potential barrier disappears. Thus, charge carriers generated in active layer are easy separated and a photosensibility in spectral range 1.3-1.65 μm appears for U_rev > U_thr. These photodiodes haven’t analog and can be successfully used in many fields of functional optoelectronics for receiving, decoding and processing the signals transferred by optic fibers.

Citation Download Citation

Valerian V. Dorogan, Tatiana S. Vieru, and Andrei V. Dorogan "New structure of photoreceivers for optic communications", Proc. SPIE 5822, Information Technologies 2004, (21 February 2005); https://doi.org/10.1117/12.612195

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