First MMW characterization of ErAs/InAlGaAs/InP semimetal-semiconductor-Schottky diode (S3) detectors for passive millimeter wave and infrared imaging

Hooman Kazemi; Jeramy D. Zimmerman; Elliott R. Brown; Arthur C. Gossard; Glenn D. Boreman; Jonathan B. Hacker; Brian Lail; Charles Middleton

doi:10.1117/12.604118

19 May 2005 First MMW characterization of ErAs/InAlGaAs/InP semimetal-semiconductor-Schottky diode (S³) detectors for passive millimeter-wave and infrared imaging

Hooman Kazemi, Jeramy D. Zimmerman, Elliott R. Brown, Arthur C. Gossard, Glenn D. Boreman, Jonathan B. Hacker, Brian Lail, Charles Middleton

Author Affiliations +

Proceedings Volume 5789, Passive Millimeter-Wave Imaging Technology VIII; (2005) https://doi.org/10.1117/12.604118
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

We present the first mm-wave characterization of Semimetal Semiconductor Schottky (S3) diodes for direct detector applications from 94 GHz to 30 THz. The S3 devices use molecular-beam epitaxy growth of binary compounds that are closely lattice-matched and crystallographically perfect across the heterointerface to reduce 1/f and burst noise while maintaining ultra-high-frequency performance. The S3 diodes are fabricated from an InAlGaAs/InP based material system with both the Schottky layer and contact layer having n and n+ doping levels. The semimetal Schottky contact is ErAs which is grown in-situ during the MBE growth. By varying the InAlAs percentage content in the epitaxial layer structure, the diode dc I-V characteristics and its zero bias responsivity are optimized. Diode s-parameter data from dc-100 GHz is used to determine the diode responsivity as a function of frequency and diode capacitance and resistance. These measurements then allow the device intrinsic and extrinsic equivalent-circuit elements to be optimized for direct detection from 94 GHz to ~30 THz.

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Hooman Kazemi, Jeramy D. Zimmerman, Elliott R. Brown, Arthur C. Gossard, Glenn D. Boreman, Jonathan B. Hacker, Brian Lail, and Charles Middleton "First MMW characterization of ErAs/InAlGaAs/InP semimetal-semiconductor-Schottky diode (S³) detectors for passive millimeter-wave and infrared imaging", Proc. SPIE 5789, Passive Millimeter-Wave Imaging Technology VIII, (19 May 2005); https://doi.org/10.1117/12.604118

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