Transfer bonding of thick silicon nitride film via split of porous silicon

X. Q. Bao; Yan Fang Ding; Yu Chen; Ping Sheng Guo; Yan Ling Shi; Lian Wei Wang; Zong Shen Lai

doi:10.1117/12.607898

8 December 2004 Transfer bonding of thick silicon nitride film via split of porous silicon

X. Q. Bao, Yan Fang Ding, Yu Chen, Ping Sheng Guo, Yan Ling Shi, Lian Wei Wang, Zong Shen Lai

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607898
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

In this paper, silicon nitride film, as thick as 1.1μm, was first deposited on porous silicon by plasma enhanced chemical vapor deposition (PECVD). No crack was detected, on the contrary of the case that is deposited on a single crystalline thin film. Such layer was bonded to a glass substrate via a media of optical epoxy. And finally, separation of such layer from the original silicon substrate via splitting of porous silicon was investigated and the transmission properties before and after transfer bonding process were investigated. It is shown that such a transfer bonding process can be a good solution to the attenuation problem in silicon based RF system.

Citation Download Citation

X. Q. Bao, Yan Fang Ding, Yu Chen, Ping Sheng Guo, Yan Ling Shi, Lian Wei Wang, and Zong Shen Lai "Transfer bonding of thick silicon nitride film via split of porous silicon", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607898

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