Epitaxial growth of atomically smooth (111)-oriented MgO films on Si (111) substrate by pulsed laser deposition

Tong Lai Chen; Xiao Min Li; Xia Zhang; Wei Dong Yu; Xiang Dong Gao

doi:10.1117/12.608010

8 December 2004 Epitaxial growth of atomically smooth (111)-oriented MgO films on Si (111) substrate by pulsed laser deposition

Tong Lai Chen, Xiao Min Li, Xia Zhang, Wei Dong Yu, Xiang Dong Gao

Author Affiliations +

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608010
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

(111)-oriented MgO thin films have been deposited on Si (111) substratres by pulsed laser deposition (PLD). The whole growth process of the films was in-situ monitored by using reflection high energy electron diffraction (RHEED) apparatus. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Furthermore, the leakage current measurement of MgO films was also performed. Completely (111)-oriented MgO films with atomically smooth surfaces were obtained. The HREED observations show that the growth mode of the MgO films is 2D layer-by-layer growth. And the I-V characteristics evidenced the excellent crystallinity of the MgO films.

Citation Download Citation

Tong Lai Chen, Xiao Min Li, Xia Zhang, Wei Dong Yu, and Xiang Dong Gao "Epitaxial growth of atomically smooth (111)-oriented MgO films on Si (111) substrate by pulsed laser deposition", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608010

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