Control of p- and n-type conduction in ZnO films and properties of ZnO p-n homojunctions

Canyun Zhang; Jiming Bian; Xiao Min Li

doi:10.1117/12.608693

8 December 2004 Control of p- and n-type conduction in ZnO films and properties of ZnO p-n homojunctions

Canyun Zhang, Jiming Bian, Xiao Min Li

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608693
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

ZnO has attracted considerable attention as a potential candidate for short-wavelength optoelectronic devices. How to realize p-type ZnO films and ZnO p-n junctions is the key step for application of ZnO-based devices. We report the growth and properties of p-type ZnO films by combination of nitrogen and indium (N-In) codoping method and ultrasonic spray pyrolysis technique. The controllability of conductivity type in ZnO based films can be realized by adjusting the deposition and doping parameters. A conversion from p-type conduction to n-type conduction in a range of temperature has been identified by the measurement of Seebeck and Hall-effect for the first time. The two-layer structured ZnO p-n homojunctions with good rectifying characteristics were successfully prepared by depositing undoped ZnO on N-In codoped ZnO film. These achievements indicate it should be possible to fabricate ZnO-based optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs) in the near future.

Citation Download Citation

Canyun Zhang, Jiming Bian, and Xiao Min Li "Control of p- and n-type conduction in ZnO films and properties of ZnO p-n homojunctions", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608693

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