An integrated imaging system for the 45-nm technology node contact holes using polarized OAI, immersion, weak PSM, and negative resists

John S. Petersen; Mark J. Maslow; Robert T. Greenway

doi:10.1117/12.600010

12 May 2005 An integrated imaging system for the 45-nm technology node contact holes using polarized OAI, immersion, weak PSM, and negative resists

John S. Petersen, Mark J. Maslow, Robert T. Greenway

Author Affiliations +

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.600010
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Imaging contact holes has become a major technology barrier for optical lithography in the deep sub-wavelength era. Using hyper-numerical aperture, extreme off-axis illumination with TE-polarization, weak PSM and negative-acting resists 50nm contacts on a 90nm pitch can be produced with better than 0.3 micron depth-of-focus with 5% exposure latitude and maximum exposure latitude of greater than 15% at best focus. Large depth-of-focus across-pitch range solutions for 50nm contacts require the use of multiple exposures using unique sources but smaller focus budgets can be reduced to single exposure. This work defines possible integrated imaging systems that will allow imaging of deep sub-wavelength sized contact holes and then compares these to other solutions that have been proposed in the literature. Specifically, source design through normalized-image-log-slope, normalized-resist-image-log-slope and process window mapping, development of contact hole primitives using full mask transform correction (where the mask pattern shape, material and topography are taken into account) and resist requirements will be discussed for developing dense, mid-range and isolated pitch contact hole imaging solutions for the 45nm technology node.

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John S. Petersen, Mark J. Maslow, and Robert T. Greenway "An integrated imaging system for the 45-nm technology node contact holes using polarized OAI, immersion, weak PSM, and negative resists", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.600010

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