Paper
10 May 2005 Utilizing overlay target noise metrics for improved process control
Sean Hannon, John C. Robinson, Marcelo Cusacovich, Chris Nelson, Harold Kennemer
Author Affiliations +
Abstract
A method has been developed for calculating the statistical effects of spatial noise on the overlay measurement extracted from a given overlay target. Previously, this metric has been shown to correlate well to the random component of Overlay Mark Fidelity (OMF), and that OMF is a significant contributor to the noise hierarchy. Quantitative diagnostic methods are required in order to assess the capabilities of overlay metrology and provide visibility into root-causes of potential inaccuracies intrinsic in the processing of overlay targets. We explore the use of this target noise metric for improved process control including improved overlay modeling, process fault detection, and process troubleshooting. In this paper we demonstrate the use of this additional metric for multiple layers in a large volume of production data utilizing existing production sampling.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sean Hannon, John C. Robinson, Marcelo Cusacovich, Chris Nelson, and Harold Kennemer "Utilizing overlay target noise metrics for improved process control", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.600153
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Overlay metrology

Metrology

Process control

Image processing

Process modeling

Semiconducting wafers

Diagnostics

Back to Top