Paper
10 May 2005 Full spectral analysis of line width roughness
L. H. A. Leunissen, G. F. Lorusso, M. Ercken, J. A. Croon, H. Yang, A. Azordegan, T. DiBiase
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Abstract
Various approaches can be used to quantify line width roughness (LWR). One of the most commonly used estimators of LWR is the standard deviation. However, this approach is incomplete and ignores a substantial amount of information. We propose here a full spectral analysis to investigate and monitor LWR. A variety of estimators, such as standard deviation, peak-to-valley, average, correlation length and Fourier analysis have been implemented on-line on CDSEM. The algorithms were successfully tested against e-beam written LWR patterns, both deterministic and random. This approach allows a fully automated investigation of LWR. This methodology was used to monitor LWR over a long period of time, benchmark new resists and to investigate the effect of LWR on device performance and yield.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. H. A. Leunissen, G. F. Lorusso, M. Ercken, J. A. Croon, H. Yang, A. Azordegan, and T. DiBiase "Full spectral analysis of line width roughness", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.600185
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Cited by 18 scholarly publications and 12 patents.
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KEYWORDS
Line width roughness

Line edge roughness

Critical dimension metrology

Transistors

Etching

Fractal analysis

Semiconducting wafers

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