Process control of photoresist undercut for lift-off patterns below 100 nm

Chao-Peng Chen; Jei-Wei Chang; Rina Kaji; Hromichi Kawasaki

doi:10.1117/12.584174

6 May 2005 Process control of photoresist undercut for lift-off patterns below 100 nm

Chao-Peng Chen, Jei-Wei Chang, Rina Kaji, Hromichi Kawasaki

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.584174
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Lift-off process is widely used to pattern small-dimension features for microelectronics. To do lift-off process, one needs to have bi-layer photoresist with desired undercut. As the critical dimension (CD) of devices is decreased, the process becomes very difficult to achieve CD and the degree of undercut simultaneously. Conventional TMAH development process alone becomes no longer feasible. Especially, due to the demand to increasingly reduce CD, the image layer’s CD and bottom layer’s undercut becomes too tight to control. In this presentation, we proposed a wet and dry process simultaneously to optimize CD and undercut. This approach is to form a photoresist feature with a larger CD using conventional wet development process. It is followed by dry development to produce the desired small CD and undercut. The critical process parameters in both steps were investigated using NEB22A2 and PMGI photoresists. The present method can also be used to produce nano-monolayer photoresist features.

Citation Download Citation

Chao-Peng Chen, Jei-Wei Chang, Rina Kaji, and Hromichi Kawasaki "Process control of photoresist undercut for lift-off patterns below 100 nm", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.584174

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