Lithographic measurement of EUV flare in the 0.3-NA micro exposure tool optic at the Advanced Laser Source

Jason P. Cain; Patrick Naulleau; Costas J. Spanos

doi:10.1117/12.600620

6 May 2005 Lithographic measurement of EUV flare in the 0.3-NA micro exposure tool optic at the Advanced Laser Source

Jason P. Cain, Patrick Naulleau, Costas J. Spanos

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.600620
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The level of flare present in a 0.3-NA EUV optic (the MET optic) at the Advanced Light Source at Lawrence Berkeley National Laboratory is measured using a lithographic method. Photoresist behavior at high exposure doses makes analysis difficult. Flare measurement analysis under scanning electron microscopy (SEM) and optical microscopy is compared, and optical microscopy is found to be a more reliable technique. In addition, the measured results are compared with predictions based on surface roughness measurement of the MET optical elements. When the fields in the exposure matrix are spaced far enough apart to avoid influence from surrounding fields and the data is corrected for imperfect mask contrast and aerial image proximity effects, the results match predicted values quite well. The amount of flare present in this optic ranges from 4.7% for 2 mm features to 6.8% for 500 nm features.

Citation Download Citation

Jason P. Cain, Patrick Naulleau, and Costas J. Spanos "Lithographic measurement of EUV flare in the 0.3-NA micro exposure tool optic at the Advanced Laser Source", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600620

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