EUV microexposures at the ALS using the 0.3-NA MET projection optics

Patrick Naulleau; Kenneth A. Goldberg; Erik Anderson; Jason P. Cain; Paul Denham; Brian Hoef; Keith Jackson; Anne-Sophie Morlens; Seno Rekawa; Kim Dean

doi:10.1117/12.600388

6 May 2005 EUV microexposures at the ALS using the 0.3-NA MET projection optics

Patrick Naulleau, Kenneth A. Goldberg, Erik Anderson, Jason P. Cain, Paul Denham, Brian Hoef, Keith Jackson, Anne-Sophie Morlens, Seno Rekawa, Kim Dean

Author Affiliations +

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.600388
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The recent development of high numerical aperture (NA) EUV optics such as the 0.3-NA Micro Exposure Tool (MET) optic has given rise to a new class of ultra-high resolution microexposure stations. Once such printing station has been developed and implemented at Lawrence Berkeley National Laboratory’s Advanced Light Source. This flexible printing station utilizes a programmable coherence illuminator providing real-time pupil-fill control for advanced EUV resist and mask development. The Berkeley exposure system programmable illuminator enables several unique capabilities. Using dipole illumination out to sigma=1, the Berkeley tool supports equal-line-space printing down to 12 nm, well beyond the capabilities of similar tools. Using small-sigma illumination combined with the central obscuration of the MET optic enables the system to print feature sizes that are twice as small as those coded on the mask. In this configuration, the effective 10x-demagnification for equal lines and spaces reduces the mask fabrication burden for ultra-high-resolution printing. The illuminator facilitates coherence studies such as the impact of coherence on line-edge roughness (LER) and flare. Finally the illuminator enables novel print-based aberration monitoring techniques as described elsewhere in these proceedings. Here we describe the capabilities of the new MET printing station and present system characterization results. Moreover, we present the latest printing results obtained in experimental resists. Limited by the availability of high-resolution photoresists, equal line-space printing down to 25 nm has been demonstrated as well as isolated line printing down to 29 nm with an LER of approaching 3 nm.

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Patrick Naulleau, Kenneth A. Goldberg, Erik Anderson, Jason P. Cain, Paul Denham, Brian Hoef, Keith Jackson, Anne-Sophie Morlens, Seno Rekawa, and Kim Dean "EUV microexposures at the ALS using the 0.3-NA MET projection optics", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600388

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