Development status of gas discharge produced plasma Z-pinch EUV sources for use in beta-tools and high volume chip manufacturing tools

U. Stamm; J. Kleinschmidt; K. Gabel; G. Hergenhan; C. Ziener; I. Ahmad; D. Bolshukhin; V. Korobotchko; A. Keller; A. Geier; J. Ringling; C. D. Tran; B. Mader; R. de Bruijn; S. Gotze; J. Brudermann; G. Schriever

doi:10.1117/12.599560

6 May 2005 Development status of gas discharge produced plasma Z-pinch EUV sources for use in beta-tools and high volume chip manufacturing tools

U. Stamm, J. Kleinschmidt, K. Gabel, G. Hergenhan, C. Ziener, I. Ahmad, D. Bolshukhin, V. Korobotchko, A. Keller, A. Geier, J. Ringling, C. D. Tran, B. Mader, R. de Bruijn, S. Gotze, J. Brudermann, G. Schriever

Author Affiliations +

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.599560
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

In the paper we report about the progress made at XTREME technologies in the development of EUV sources based on gas discharge produced plasma (GDPP) technologies as well as the integration of collector optics. Optics from different suppliers were integrated to the source and the performance of the radiation in the intermediate focus and in the far field behind the intermediate focus were determined using newly developed metrology tools. To improve the source performance in the development program for beta exposure tools and high volume manufacturing exposure tools both tin and xenon have been investigated as fuel for the EUV sources. Development progress in porous metal cooling technology as well as pulsed power circuit design has led to GDPP sources with xenon fuel continuously operating with an output power of 200 W in 2π sr at 4500 Hz repetition rate. With tin fuel an output power of 400 W in 2π sr was obtained leaving all other conditions unaltered with respect to the xenon based source. The performance of the xenon fueled sources is sufficiently good to fulfill all requirements up to the beta tool level. The required power of 10-20 W in the intermediate focus region at etendue between 3 and 5 mm2sr was demonstrated by using a xenon based source. The status of the integration of the sources with grazing incidence collector optics is discussed in detail. Images using visible light or EUV light in the intermediate focus region or in the far field behind the intermediate focus are presented for the first time. EUV pulse to pulse energy and stability has been measured out of the source and in the intermediate focus. Data on debris reduction show that lifetime expectations for beta-tools will be met.

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U. Stamm, J. Kleinschmidt, K. Gabel, G. Hergenhan, C. Ziener, I. Ahmad, D. Bolshukhin, V. Korobotchko, A. Keller, A. Geier, J. Ringling, C. D. Tran, B. Mader, R. de Bruijn, S. Gotze, J. Brudermann, and G. Schriever "Development status of gas discharge produced plasma Z-pinch EUV sources for use in beta-tools and high volume chip manufacturing tools", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.599560

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