Paper
7 March 2005 Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN
Christian Wetzel, Yong Xia, Theeradetch Detchprohm, Peng Li, Jeffrey S. Nelson
Author Affiliations +
Abstract
Increasing emission power and efficiency in green light emitting diodes is one of the big challenges towards all-solid-state lighting. The prime challenge lies in the combination of extension of wavelength from 470 nm blue to 525 nm green while maintaining the emission power level. Commonly a steep decrease in power is observed. In a broad development effort we have been able to ameliorate that decrease significantly and obtain bare die performance at 525 nm of 1.6 mW at 20 mA for 350x350 μm2 dies. Here we discuss critical die performance and wafer yield aspects of our optimization approach to the active layer of the GaInN/GaN quantum wells.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Wetzel, Yong Xia, Theeradetch Detchprohm, Peng Li, and Jeffrey S. Nelson "Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); https://doi.org/10.1117/12.602144
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

Green light emitting diodes

Light emitting diodes

Semiconducting wafers

Gallium

Diodes

Atomic force microscopy

Back to Top