Paper
13 April 2005 Ultra-broadband THz field detection by ion-implanted III-V PC antenna (Invited Paper)
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Abstract
The photoconductive (PC) antenna fabricated on arsenic-ion-implanted GaAs (GaAs:As+) and proton-bombarded InP (InP:H+) substrates are shown to have a useful detection bandwidths beyond 30 THz. This is comparable to that of the reference LT-GaAs PC antenna. The signal-to-noise ratio of these ion-implanted III-V PC antennas are, however, worse than that of the LT-GaAs devices because of the higher stray currents of the former under illumination. Ion-implanted III-V PC antennas are nevertheless attractive because the implanters are widely available, process parameters well-established and compatible with the IC industry. Implantations in selective areas are also straight forward. Our results suggest that ion-implanted III-V material can be a good choice as substrate or THz PC antennas, if the resistivity is increased by a proper annealing process and/or optimizing the implantation recipe.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ci-Ling Pan "Ultra-broadband THz field detection by ion-implanted III-V PC antenna (Invited Paper)", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); https://doi.org/10.1117/12.596668
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KEYWORDS
Antennas

Terahertz radiation

Gallium arsenide

Resistance

Signal to noise ratio

Signal detection

Picosecond phenomena

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