Simulation of GaN/InGaN micro-ring light-emitting devices

Vladislav Dubikovskiy; Mark C. Townsend; Robert D. Cottle

doi:10.1117/12.593031

28 April 2005 Simulation of GaN/InGaN micro-ring light-emitting devices (Invited Paper)

Vladislav Dubikovskiy, Mark C. Townsend, Robert D. Cottle

Proceedings Volume 5722, Physics and Simulation of Optoelectronic Devices XIII; (2005) https://doi.org/10.1117/12.593031
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We have extended the capabilities of the commercial device simulator ATLAS with extra models specific to the simulation of LED devices. This simulator was used to simulate the characteristics of a GaN/InGaN micro-ring light-emitting diode. These results include spectral response and output coupling efficiency

Citation Download Citation

Vladislav Dubikovskiy, Mark C. Townsend, and Robert D. Cottle "Simulation of GaN/InGaN micro-ring light-emitting devices (Invited Paper)", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.593031

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