Paper
28 April 2005 Gain lever characterization in monolithically integrated diode lasers
Michael Pocha, Tiziana Bond, Rebecca Welty, Stephen Vernon, Jeffrey Kallman, Elaine Behymer
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Abstract
Gain Lever, an effect for enhancing amplitude modulation (AM) efficiency in multisection laser diodes1, has been characterized in InGaAs DQW edge emitting lasers that are integrated with passive waveguides. Specifically designed structures which give a range of split ratios from 1:1 to 9:1 have been fabricated and measured to fully characterize the parameter space for operation in the gain lever mode. Additionally the experimental results are compared to a hybrid 3-D simulation involving effective index method (EIM) reduction to 2-D. Gains greater than 6 dB in the AM efficiency can be achieved within the appropriate operating range, but this gain drops rapidly as the parameter range is exceeded. High speed RF modulation with significant gain is, in principle, possible if proper biasing and modulation conditions are used. This phenomenon can also be useful for high-speed digital information transmission.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Pocha, Tiziana Bond, Rebecca Welty, Stephen Vernon, Jeffrey Kallman, and Elaine Behymer "Gain lever characterization in monolithically integrated diode lasers", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.590904
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Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Waveguides

Electrodes

Semiconductor lasers

Amplitude modulation

Gallium arsenide

Silicon

3D modeling

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