Edge and surface-emitting tilted cavity lasers

N. N. Ledentsov; V. A. Shchukin; A. R. Kovsh; S. S. Mikhrin; I. L. Krestnikov; A. V. Kozhukhov; N. Yu. Gordeev; L. Ya. Karachinsky; M. V. Maximov; I. I. Novikov; Yu. M. Shernyakov

doi:10.1117/12.601953

28 April 2005 Edge and surface-emitting tilted cavity lasers (Invited Paper)

N. N. Ledentsov, V. A. Shchukin, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, N. Yu. Gordeev, L. Ya. Karachinsky, M. V. Maximov, I. I. Novikov, Yu. M. Shernyakov

Author Affiliations +

Proceedings Volume 5722, Physics and Simulation of Optoelectronic Devices XIII; (2005) https://doi.org/10.1117/12.601953
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The Tilted Cavity (TC) concept has been proposed to combine advantages of edge- and surface-emitting lasers (detectors, amplifiers, switches, etc.). Tilted Cavity Lasers (TCL) enable wavelength-stabilized high-power edge and surface emitters (TCSEL) in low-cost single-epitaxial step design. The concept covers numerous applications including mode-locked TCL for light speed control, dispersion and linewidth engineering, GaN-based light-emitters, electrooptic wavelength tunable devices, and other applications. Presently, wavelength stabilized TC operation is realized between -200°C and 70°C in broad TCL diodes with cleaved facets based on quantum dots (QDs). The spectral width is below 0.6 nm in broad area 100 μm-wide-stipe devices. The far fields are: 4° (lateral) and 42° (vertical). Wavelength-stabilized 1.16 μm and 1.27 μm edge-emitting QD TCL lasers are demonstrated. Quantum well TCL demonstrate high-temperature operation up to 240°C with a low threshold, high temperature stability and improved wavelength stability. The tilted cavity approach can also be applied in wavelength-optimized photodetectors, switches, semiconductor optical amplifiers, including multi-channel devices, in optical fibers, in photodetectors, in light-emitting diodes and in many other applications. Moreover, microelectronic devices based on similar tilted angle resonance phenomena in quantum wells and superlattices can be realized in electron- or hole-wavefunction-engineered structures, thus, merging the fields of nanophotonics and nanoelectronics. The tilted cavity concept can be further complimented by lateral patterning and (or) processing of three-dimensional photonic crystal structures further extending horizons of modern optoelectronics.

Citation Download Citation

N. N. Ledentsov, V. A. Shchukin, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, N. Yu. Gordeev, L. Ya. Karachinsky, M. V. Maximov, I. I. Novikov, and Yu. M. Shernyakov "Edge and surface-emitting tilted cavity lasers (Invited Paper)", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.601953

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available