An improved modal gain model for semiconductor lasers

Cheng Guan Lim; Stavros Iezekiel; Christopher M. Snowden

doi:10.1117/12.590215

28 April 2005 An improved modal gain model for semiconductor lasers

Cheng Guan Lim, Stavros Iezekiel, Christopher M. Snowden

Proceedings Volume 5722, Physics and Simulation of Optoelectronic Devices XIII; (2005) https://doi.org/10.1117/12.590215
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The calculated gain spectrum of a semiconductor laser based on a generic modal gain model reveals a gain peak that is higher than measured. Analyses of the model and the gain mechanism in semiconductor lasers suggest that the accuracy of the model can be improved by re-formulating the carrier occupation probabilities associated with the model. As a result, good agreement between the optical gain spectrum calculated using the revised model and measured results is achieved.

Citation Download Citation

Cheng Guan Lim, Stavros Iezekiel, and Christopher M. Snowden "An improved modal gain model for semiconductor lasers", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.590215

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