The photodetected function of silicon photoelectronic lambda negative resistance transistor (PLBT)

Shi-lin Zhang; Bo Zhang; Wei-lian Guo; Lu-hong Mao; Pei-ning Zhang

doi:10.1117/12.572717

17 January 2005 The photodetected function of silicon photoelectronic lambda negative resistance transistor (PLBT)

Shi-lin Zhang, Bo Zhang, Wei-lian Guo, Lu-hong Mao, Pei-ning Zhang

Proceedings Volume 5644, Optoelectronic Devices and Integration; (2005) https://doi.org/10.1117/12.572717
Event: Photonics Asia, 2004, Beijing, China

Abstract

In this paper, the photo-detected and controlled functions based on silicon photo-electronic Lambda transistor (PLBT) are reported. PLBT is composed of a npn vertical bipolar transistor as main device and a enhancement-mode MOSFET transistor as feedback device which connected in parallel across the base and collector terminals of bipolar transistor. Photo-electronic-lambda bipolar transistor (PLBT) is one important member of Si-photo electronic negative resistance devices. It has wide applications in photo-electronic coupler, light detector, light sensor and other photo-electronic circuit modules, which is significant for the further study of photo-electronic devices and circuits. When the Si-photo-electronic negative transistor device works as a load, it has two stable output states (bistability characteristics) with the change of the input light signals. Using the photo-bistable and self-locking characteristics of the PLBT, a photo-controlled Bistable Logic Circuit Element has been set up successfully. Through detail studying and analyzing to the operation feature and load feature of the photo-controlled bistable circuit, the nonlinear characteristic of the circuit is demonstrated. Furthermore the applications of this circuit element have been studied and verified.

Citation Download Citation

Shi-lin Zhang, Bo Zhang, Wei-lian Guo, Lu-hong Mao, and Pei-ning Zhang "The photodetected function of silicon photoelectronic lambda negative resistance transistor (PLBT)", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); https://doi.org/10.1117/12.572717

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KEYWORDS

Field effect transistors

Transistors

Resistance

Bistability

Logic

Resistors

Silicon

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