Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser

Yongqiang Ning; Yanfang Sung; Zhenhua Jin; Lijun Wang

doi:10.1117/12.575229

17 January 2005 Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser

Yongqiang Ning, Yanfang Sung, Zhenhua Jin, Lijun Wang

Proceedings Volume 5644, Optoelectronic Devices and Integration; (2005) https://doi.org/10.1117/12.575229
Event: Photonics Asia, 2004, Beijing, China

Abstract

Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission, amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm, dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm^-1.

Citation Download Citation

Yongqiang Ning, Yanfang Sung, Zhenhua Jin, and Lijun Wang "Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); https://doi.org/10.1117/12.575229

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