Application of Monte Carlo method to GaAs photoconductive semiconductor switches

Wei Shi; Huiying Dai; Mingliang Gu; Guanghui Qu; Deming Ma

doi:10.1117/12.577810

17 January 2005 Application of Monte Carlo method to GaAs photoconductive semiconductor switches

Wei Shi, Huiying Dai, Mingliang Gu, Guanghui Qu, Deming Ma

Proceedings Volume 5644, Optoelectronic Devices and Integration; (2005) https://doi.org/10.1117/12.577810
Event: Photonics Asia, 2004, Beijing, China

Abstract

Monte-Carlo method is adopted in GaAs PCSS's simulation, In the case of high optical fluence, space-charge field can intensity influence the movement of the carrier. Thus, space-charge field can intensity influence not only the shape of photo-electric current of PCSS's, but also the terahertz out put of photo-conducting antenna. In this paper, the forming and movement of space-charge field are simulated by means of Monte-Carlo method. And the result of simulate indicates that optically activated charge multi-domain exists in photoconductor. The forming of multi-domain is also explained in this paper.

Citation Download Citation

Wei Shi, Huiying Dai, Mingliang Gu, Guanghui Qu, and Deming Ma "Application of Monte Carlo method to GaAs photoconductive semiconductor switches", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); https://doi.org/10.1117/12.577810

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