Analysis of 1/f noise on LWIR HgCdTe photodiodes with different passivation

Jinsui Liang; Tao Sun; Yanjin Li; Xiaoning Hu

doi:10.1117/12.572132

10 January 2005 Analysis of 1/f noise on LWIR HgCdTe photodiodes with different passivation

Jinsui Liang, Tao Sun, Yanjin Li, Xiaoning Hu

Proceedings Volume 5640, Infrared Components and Their Applications; (2005) https://doi.org/10.1117/12.572132
Event: Photonics Asia, 2004, Beijing, China

Abstract

We study the 1/f noise currents and dark currents in LWIR HgCdTe photodiodes with different passivation. The diodes are fabricated by ion implanting boron on MBE HgCdTe with x=0.2173. One kind of photodiodes was passivated by ZnS and the other kind was passivated by CdTe/ZnS. Both dark currents and 1/f noise currents were measured at several reverse bias voltages. The measured dark currents of the photodiodes are analyzed using current model fitting methods. The different dark current components, such as diffusion current, generation-recombination current, trap assisted tunneling current and band-to-band tunneling current, at various biases voltages can be separated from the measured dark currents. The measurement results demonstrate that the dominant mechanism that produces 1/f noise in HgCdTe photodiodes with either passivation is tunneling. When the reverse bias voltages are less than 200mv, the main mechanism that produces 1/f noise is trap assisted tunneling. In this case, the 1/f noise currents of the photodiodes passivated by ZnS are smaller than those passivated by CdTe/ZnS. When the reverse biases are larger than 200mv, the band-to-band tunneling currents of the photodiodes passivated by ZnS are much larger than the photodiodes passivated by CdTe/ZnS. And the 1/f noise currents of the ZnS passivated photodiodes are larger than the different passivated one. In order to investigate the effect of surface passivation on the stability of two kinds of diodes, R-V characteristics and 1/f noise of the diodes were measured after vacuum baking for 10 hour at 80°C, the photodiodes passivated by CdTe/ZnS show higher performance compared with the diodes passivated by ZnS after baking.

Citation Download Citation

Jinsui Liang, Tao Sun, Yanjin Li, and Xiaoning Hu "Analysis of 1/f noise on LWIR HgCdTe photodiodes with different passivation", Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); https://doi.org/10.1117/12.572132

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available