AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range

Alexander S. Usikov; Elizaveta V. Shapvalova; Yuri V. Melnik; Vladimir A. Ivantsov D.V.M.; Vladimir A. Dmitriev; Charles J. Collins; Anand V. Sampath; Gregory A. Garrett; Paul Hongen Shen; Michael Wraback

doi:10.1117/12.578452

29 December 2004 AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range

Alexander S. Usikov, Elizaveta V. Shapvalova, Yuri V. Melnik, Vladimir A. Ivantsov D.V.M., Vladimir A. Dmitriev, Charles J. Collins, Anand V. Sampath, Gregory A. Garrett, Paul Hongen Shen, Michael Wraback

Author Affiliations +

Proceedings Volume 5617, Optically Based Biological and Chemical Sensing for Defence; (2004) https://doi.org/10.1117/12.578452
Event: European Symposium on Optics and Photonics for Defence and Security, 2004, London, United Kingdom

Abstract

In this paper we report on the fabrication and characterization of GaN, AlGaN, and AlN layers grown by hydride vapor phase epitaxy (HVPE). The layers were grown on 2-inch and 4-inch sapphire and 2-inch silicon carbide substrates. Thickness of the GaN layers was varied from 2 to 80 microns. Surface roughness, Rms, for the smoothest GaN layers was less than 0.5 nm, as measured by AFM using 10 μm x 10 μm scans. Background Nd-Na concentration for undoped GaN layers was less than 1x10¹⁶ cm^-3. For n-type GaN layers doped with Si, concentration Nd-Na was controlled from 10¹⁶ to 10¹⁹ cm^-3. P-type GaN layers were fabricated using Mg doping with concentration Na-Nd ranging from 4x10¹⁶ to 3x10¹⁸ cm^-3, for various samples. Zn doping also resulted in p-type GaN formation with concnetration N_D-N_A in the 10¹⁷ cm^-3 range. UV transmission, photoluminescence, and crystal structure of AlGaN layers with AlN concentration up to 85 mole.% were studied. Dependence of optical band gap on AlGaN alloy composition was measured for the whole composition range. Thick (up to 75 microns) crack-free AlN layers were grown on SiC substrates. Etch pit density for such thick AlN layers was in the 10⁷ cm^-2 range.

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Alexander S. Usikov, Elizaveta V. Shapvalova, Yuri V. Melnik, Vladimir A. Ivantsov D.V.M., Vladimir A. Dmitriev, Charles J. Collins, Anand V. Sampath, Gregory A. Garrett, Paul Hongen Shen, and Michael Wraback "AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range", Proc. SPIE 5617, Optically Based Biological and Chemical Sensing for Defence, (29 December 2004); https://doi.org/10.1117/12.578452

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