Performance of small-pitched Hg1-xCdxTe photoconductors based on MBE-grown multilayer structures

Galina V. Chekanova; Albina A. Drugova; Sergey A. Dvoretski; Viacheslav A. Kholodnov; Alexey A. Komov; Alexander V. Kurbatov; Ivan Yu. Lartsev; Mikhail S. Nikitin; Yuri G. Sidorov

doi:10.1117/12.578065

6 December 2004 Performance of small-pitched Hg_1-xCd_xTe photoconductors based on MBE-grown multilayer structures

Galina V. Chekanova, Albina A. Drugova, Sergey A. Dvoretski, Viacheslav A. Kholodnov, Alexey A. Komov, Alexander V. Kurbatov, Ivan Yu. Lartsev, Mikhail S. Nikitin, Yuri G. Sidorov

Author Affiliations +

Proceedings Volume 5612, Electro-Optical and Infrared Systems: Technology and Applications; (2004) https://doi.org/10.1117/12.578065
Event: European Symposium on Optics and Photonics for Defence and Security, 2004, London, United Kingdom

Abstract

Compact small-pitched infrared focal plane arrays (FPA) having ultimate performance are of the great interest for development and production of state-of-the-art special and common use thermal imaging systems lighter in weight and with lower energy consumption. Novel MBE-grown Hg_1-xCd_xTe epitaxial multi-layer structures are considered perspective for manufacturing of such FPA. Objective of the present work was to examine the impact of small-pitched Long-Wave Infrared (LWIR) Hg_1-xCd_xTe photoconductor device performance on variation of background flux density. Peak wavelength λ_p was ranged from 10.5 to 11.5 μm at 78-100 K. High performance small active area photoconductors based on MBE-grown multi-layer structures consisting of homogeneous narrow-gap n-Hg_1-xCd_xTe absorbing layer (n-absorber) both side blocked by thin graded-gap Hg_1-xCd_xTe layers have been fabricated and examined. Availability of innovative Hg_1-xCd_xTe epitaxial material (half-finished products of photoconductors - three-layer sensitive structures grown by MBE in single run) gives opportunity to manufacture and offer versatile detectors with flexible tuning of electro-optical parameters. Multi-element (2 x 32=64 elements) Hg_1-xCd_xTe photoconductors with pixel's active area size 30 μm x 30 μm and pitch 45 µm were tested. Electro-optical measurements have shown improved value of peak responsivity and detectivity close to theoretically predicted for model photoconductor.

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Galina V. Chekanova, Albina A. Drugova, Sergey A. Dvoretski, Viacheslav A. Kholodnov, Alexey A. Komov, Alexander V. Kurbatov, Ivan Yu. Lartsev, Mikhail S. Nikitin, and Yuri G. Sidorov "Performance of small-pitched Hg_1-xCd_xTe photoconductors based on MBE-grown multilayer structures", Proc. SPIE 5612, Electro-Optical and Infrared Systems: Technology and Applications, (6 December 2004); https://doi.org/10.1117/12.578065

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Tellurium

Mercury

Long wavelength infrared

Staring arrays

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