Paper
24 September 2004 Temperature dependence of the threshold and Auger recombination in asymmetric quantum-well heterolasers
Author Affiliations +
Proceedings Volume 5582, Advanced Optoelectronics and Lasers; (2004) https://doi.org/10.1117/12.583462
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
The temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) has been determined. Processes of non-radiative Auger recombination which occur in the active region of the quantum-well lasers have been included into consideration. The analytical approach for the evaluation of the characteristic temperature of the lasing threshold is presented. For described asymmetric quantum-well heterostructure lasers, it is shown that the influence of Auger recombination processes on the temperature behavior of the lasing threshold is not essential until the temperature of the active region is lower than 360 K and the cavity losses do not exceed 80 cm-1.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor A. Sukhoivanov, Olga V. Mashoshyna, Valerii K. Kononenko, and Dmitrii V. Ushakov "Temperature dependence of the threshold and Auger recombination in asymmetric quantum-well heterolasers", Proc. SPIE 5582, Advanced Optoelectronics and Lasers, (24 September 2004); https://doi.org/10.1117/12.583462
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Cited by 4 scholarly publications.
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KEYWORDS
Quantum wells

Heterojunctions

Laser damage threshold

Semiconductor lasers

Transition metals

Autoregressive models

Quantum efficiency

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