Formation and verification of a 90-nm contact lumped model

Chi-Yuan Hung; Bin Zhang; Yong Done Wang

doi:10.1117/12.569308

6 December 2004 Formation and verification of a 90-nm contact lumped model

Chi-Yuan Hung, Bin Zhang, Yong Done Wang

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.569308
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

As IC design rules shrink dramatically while the wavelength reduction in exposure systems can not keep up, extensive usage of Litho RET, Etch trimming and OPC techniques has become common practice in the integrated patterning flow. We examined a large number of CD measurement datasets of 90nm Contact layer ADI and AEI CD. As the etch bias is not a constant through pitch, AEI contribution has to be incorporated in the OPC model. Based on these datasets, we tried to develop a non-constant AEI model. In this paper, we investigated various strategies to streamline OPC modeling. Multiple regression method is used to fit CTR and CTE models. It was revealed that an extra long range Loading Kernel, additional to a well-fitted ADI model, may not successfully meet the fitting criteria we want. Mainly due to the fact that models with too many eigenvectors would have a tendency to over-fit-and-correct CD curves. We introduced an alternative approach by limiting the number of parameters in our model OPC algorithm. We achieved a 90nm Contact Model with OPC empirical data fitting error within +-2nm. Lastly, the wafer verification datasets showed only 3σ = 7.82 nm of through-pitch OPC residual error by using this Constant Threshold Etch Model, compared to simulation residue error 3σ of 8 nm.

Citation Download Citation

Chi-Yuan Hung, Bin Zhang, and Yong Done Wang "Formation and verification of a 90-nm contact lumped model", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569308

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Data modeling

Optical proximity correction

Etching

Semiconducting wafers

Photomasks

Optical lithography

Wafer-level optics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years