Further characterization of Rockwell Scientific LWIR HgCdTe detector arrays

Candice M. Bacon; Craig W. McMurtry; Judith L. Pipher; William J. Forrest; James D. Garnett; Donald Lee; Dennis D. Edwall

doi:10.1117/12.558804

21 October 2004 Further characterization of Rockwell Scientific LWIR HgCdTe detector arrays

Candice M. Bacon, Craig W. McMurtry, Judith L. Pipher, William J. Forrest, James D. Garnett, Donald Lee, Dennis D. Edwall

Author Affiliations +

Proceedings Volume 5563, Infrared Systems and Photoelectronic Technology; (2004) https://doi.org/10.1117/12.558804
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

Future infrared space missions will undoubtedly employ passively cooled focal plane arrays (T ~ 30K), as well as passively cooled telescopes. Most long-wave detector arrays (e.g. Si:As IBC) require cooling to temperatures of ~ 6-8K. We have been working with Rockwell Scientific Company to produce <= 10 micron cutoff HgCdTe detector arrays that, at temperatures of ~30K, exhibit sufficiently low dark current and sufficiently high detective quantum efficiency, as well as high uniformity in these parameters, to be interesting for astronomy. Our goal is to achieve dark current below the target value of ~ 30 e-/s/pixel with at least 60mV of actual reverse bias across the diodes at T ~ 30K. To this end, Rockwell Scientific Company has delivered three 10 micron cutoff HgCdTe low dark current detector arrays with small capacitance diodes for characterization in Rochester. The most recent presentation showed the remarkable preliminary performance of the first of these devices. We present further results on the first device along with results on the subsequent two deliveries.

Citation Download Citation

Candice M. Bacon, Craig W. McMurtry, Judith L. Pipher, William J. Forrest, James D. Garnett, Donald Lee, and Dennis D. Edwall "Further characterization of Rockwell Scientific LWIR HgCdTe detector arrays", Proc. SPIE 5563, Infrared Systems and Photoelectronic Technology, (21 October 2004); https://doi.org/10.1117/12.558804

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