Paper
20 October 2004 Model validation of SIM external metrology at the sub-nanometer level
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Abstract
In order to achieve micro-arcsecond astrometry, SIM must make measurements of various optical pathlengths at the picometer level. In this regime of precision, nearly every simplifying assumption in optics must be reexamined as a potential source of systematic error. SIM makes extensive use of physics-based models to predict the form and level of systematic errors affecting instrument performance. Since many of the modeling areas represent new frontiers in optical modeling, the validation of these physical models is a significant challenge that SIM must meet. In the case of the external metrology truss, the model must account for the imperfections in the corner cubes as well as the distance measuring interferometers ("beam launchers"). This model is being validated using the Kite testbed, a 2-D metrology truss with picometer-level accuracy in displacement measurements. We present the model, and the results of the model validation tests on the Kite testbed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bijan Nemati and Gary M. Kuan "Model validation of SIM external metrology at the sub-nanometer level", Proc. SPIE 5491, New Frontiers in Stellar Interferometry, (20 October 2004); https://doi.org/10.1117/12.549700
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Cited by 3 scholarly publications.
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KEYWORDS
Metrology

Data modeling

Interferometers

Phase shifts

Reflection

Sensors

Coating

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