Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs

Nataliya R Lukyanchikova; N. Garbar; A. Smolanka; Eddy R. Simoen; A. Mercha; Cor Claeys

doi:10.1117/12.546971

25 May 2004 Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs

Nataliya R Lukyanchikova, N. Garbar, A. Smolanka, Eddy R. Simoen, A. Mercha, Cor Claeys

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546971
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

In this paper, some new front-back coupling noise effects are described. They have been revealed in partially-depleted SOI MOSFETs under conditions where an accumulating voltage is applied to the back gate. The first effect consists in the appearance of a Lorentzian component in the noise spectra of the front channel current. The time constant for such Lorentzians which are observed in weak and strong inversion decreases with increasing amplitude of the back-gate voltage and is independent of the front-gate voltage. The second effect is the decrease of the amplitude and the turn-over frequency of the LKE noise Lorentzians that are present in the noise spectra due to the EVB tunneling currents. It is shown that the Lorentzians generated under conditions of an accumulating back-gate voltage and the LKE Lorentzians are analogous by their nature. A model is considered whereby the source of the Lorentzians entering the noise spectra in the presence of an accumulating back-gate voltage is the Nyquist noise voltage generated across the p⁺-n⁺ junction induced by the back-gate voltage at the source/back gate. The capacitive character of the source-body impedance is the reason for the Lorentzian shape of the noise component generated by those Nyquist fluctuations

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Nataliya R Lukyanchikova, N. Garbar, A. Smolanka, Eddy R. Simoen, A. Mercha, and Cor Claeys "Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.546971

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