Experimental and theoretical analysis of 1/f noise in polysilicon thin film transistors

Abdelmalek Boukhenoufa; Laurent Pichon; Christophe Cordier; Hicham El Din Kotb; Tayeb Mohamed-Brahim

doi:10.1117/12.547031

25 May 2004 Experimental and theoretical analysis of 1/f noise in polysilicon thin film transistors

Abdelmalek Boukhenoufa, Laurent Pichon, Christophe Cordier, Hicham El Din Kotb, Tayeb Mohamed-Brahim

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.547031
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

A study of low frequency noise is made in Solid Phase Crystallised (SPC) polysilicon Thin Film Transistors (TFTs) issued from low temperature process (≤600° C). The study is performed in both below and above threshold regions. At first, a static electrical caracterisation of the transistors is carried out. Analysis of the low frequency noise in the TFTs shows that it can be related both to the Meyer-Neldel MN effect, and to the flatband voltage fluctuations due to the trapping/detrapping processes of carriers at the S_iO₂/Poly-S_i interface. Furthermore, a new method of the channel carrier number calculation is proposed. Then, the apparent noise parameter α_app, based on the Hooge formula, is deduced. At low gate voltages α_app increases and reaches a maximum value close to the threshold voltage. This α_app singular behavior is then discussed.

Citation Download Citation

Abdelmalek Boukhenoufa, Laurent Pichon, Christophe Cordier, Hicham El Din Kotb, and Tayeb Mohamed-Brahim "Experimental and theoretical analysis of 1/f noise in polysilicon thin film transistors", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.547031

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