Realization of organic pn-homojunction using a novel n-type doping technique

Kentaro Harada; Ansgar G. Werner; Martin Pfeiffer; Corey J. Bloom; C. Michael Elliott; Karl Leo

doi:10.1117/12.546723

8 September 2004 Realization of organic pn-homojunction using a novel n-type doping technique

Kentaro Harada, Ansgar G. Werner, Martin Pfeiffer, Corey J. Bloom, C. Michael Elliott, Karl Leo

Author Affiliations +

Proceedings Volume 5464, Organic Optoelectronics and Photonics; (2004) https://doi.org/10.1117/12.546723
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

We present a novel n-type doping technique for organic semiconductors using the metal complex bis(terpyridine)ruthenium as a strong donor. Owing to its low oxidation potential, the reduced neutral form of the donor complex allows an electron transfer to the matrix. This enables n-type conduction that has been seldom reported in metallophthalocyanine systems doped with organic compounds. The n-type zinc-phthalocyanine layers are characterized by the conductivity and the field-effect measurements. By sequential coevaporation of p- and n-doped layers, we have prepared the first stable and reproducible organic homojunction of zinc-phthalocyanine. The diode exhibits surprisingly high built-in voltage attractive e.g. for organic solar cell applications. The temperature dependence of the current-voltage characteristics does not follow the standard Shockley theory of pn-junctions. We explain the behavior of the ideality factor and the saturation current by deviations from the classical Einstein relation at low temperatures.

Citation Download Citation

Kentaro Harada, Ansgar G. Werner, Martin Pfeiffer, Corey J. Bloom, C. Michael Elliott, and Karl Leo "Realization of organic pn-homojunction using a novel n-type doping technique", Proc. SPIE 5464, Organic Optoelectronics and Photonics, (8 September 2004); https://doi.org/10.1117/12.546723

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