Polarization effects in second-harmonic generation in a GaN-based one-dimensional photonic crystal

Dominique Coquillat; Jeremi Torres; Rene Legros; Jean Paul Lascaray; David Peyrade; Yong Chen; Richard M. De La Rue; Marine Le Vassor d'Yerville; Emmanuel Centeno; David Cassagne; J. P. Albert

doi:10.1117/12.545605

15 September 2004 Polarization effects in second-harmonic generation in a GaN-based one-dimensional photonic crystal

Dominique Coquillat, Jeremi Torres, Rene Legros, Jean Paul Lascaray, David Peyrade, Yong Chen, Richard M. De La Rue, Marine Le Vassor d'Yerville, Emmanuel Centeno, David Cassagne, J. P. Albert

Author Affiliations +

Proceedings Volume 5450, Photonic Crystal Materials and Nanostructures; (2004) https://doi.org/10.1117/12.545605
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

Investigations of polarizations effects in second-harmonic generation of a one-dimensional photonic crystal based on gallium nitride were performed for the fundamental beam incident on the surface of the photonic crystal. The angle of incidence, the azimuthal rotation angle of the photonic crystal, the frequency, and the polarization behaviour for strongly enhanced second-harmonic generation agree well with the identified position and polarization of the resonant Bloch modes. Along the direction, giant enhancements of 7500 times in the second-harmonic conversion have been obtained in the one-dimensional photonic crystal by comparison with the unpatterned GaN layer. The combined role of the resonant coupling of the fundamental field and of the second-harmonic field has been observed as the polarization of the fundamental beam is rotated.

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Dominique Coquillat, Jeremi Torres, Rene Legros, Jean Paul Lascaray, David Peyrade, Yong Chen, Richard M. De La Rue, Marine Le Vassor d'Yerville, Emmanuel Centeno, David Cassagne, and J. P. Albert "Polarization effects in second-harmonic generation in a GaN-based one-dimensional photonic crystal", Proc. SPIE 5450, Photonic Crystal Materials and Nanostructures, (15 September 2004); https://doi.org/10.1117/12.545605

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