Investigation of Cr defect in high Cr load logic mask

Ho-Yong Jung; Sung Jin Choi; Mun-Sik Kim; Dong Wook Lee; Junsik Lee; Oscar Han

doi:10.1117/12.557677

20 August 2004 Investigation of Cr defect in high Cr load logic mask

Ho-Yong Jung, Sung Jin Choi, Mun-Sik Kim, Dong Wook Lee, Junsik Lee, Oscar Han

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557677
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

In this study, Cr defects resulted from high voltage E-beam writing in high Cr load Logic Mask were investigated. The Cr defect, which is a damage of anti-reflection layer on Cr, is mainly found in isolated Cr patterns of high Cr load Logic Mask. This defect appears under high voltage E-beam writing with high dose and dry etch process. High accelerating voltage and dose of E-beam writing decrease the thickness of remaining E-beam resist after developing. These phenomena are more significant in high Cr load Logic Mask consisted of isolated Cr patterns. Because the resist thickness of isolated Cr pattern is not enough for enduring dry etch process-induced damage, Cr surface is damaged during etching. Consequently, the Cr surface damage of high Cr load Logic Mask is related with voltage and dose of E-beam and dry etch process time. To prevent these defects, low accelerating voltage and dose of E-beam and low thickness of Cr layer to increase dry etch process margin are necessary.

Citation Download Citation

Ho-Yong Jung, Sung Jin Choi, Mun-Sik Kim, Dong Wook Lee, Junsik Lee, and Oscar Han "Investigation of Cr defect in high Cr load logic mask", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557677

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