Paper
28 May 2004 Phases transformation in Ti(Ta)-Ni(Co)-Si-N systems
I. A. Horin, Alexander A. Orlikovsky, A. G. Vasiliev, A. L. Vasiliev
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557297
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Investigations of the Ti-Co, Ti-Ni and Ta-Ni thin films produced by magnetron co-sputtering and electron beam co-evaporation on Si substrates heated to 700-800° in nitrogen ambient with and without buffer layers are described. The TEM data show clear phase separation of TaN and NiSi2 for the Ta-Ni film deposited in a high N2 pressure ambient. Deposition at lower N2 pressure led to the formation of a mixed Ni-Ta-Si layer. The phase separation effect was absent for Ni-Ti films at high N2 pressure. The presence of buffer layers strongly affected the surface diffusion reactions in the Co-Ti-Si system. Formation of Ti-(O) or CoSix amorphous layers at the Si surface prevented the interdiffusion of Si and Co, such that even pure Co or Co2Si layers could be formed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. A. Horin, Alexander A. Orlikovsky, A. G. Vasiliev, and A. L. Vasiliev "Phases transformation in Ti(Ta)-Ni(Co)-Si-N systems", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557297
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KEYWORDS
Silicon

Diffusion

Nitrogen

Transmission electron microscopy

Cobalt

Interfaces

Electron beams

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