Defect printability in CPL mask technology

Jan-Pieter Kuijten; Arjan Verhappen; Wil Pijnenburg; Will Conley; Lloyd C. Litt; Wei Wu; Patrick Montgomery; Bernard J. Roman; Bryan S. Kasprowicz; Christopher J. Progler; Robert John Socha; Douglas J. Van Den Broeke; Erika Schaefer; Pat Cook

doi:10.1117/12.537619

28 May 2004 Defect printability in CPL mask technology

Jan-Pieter Kuijten, Arjan Verhappen, Wil Pijnenburg, Will Conley, Lloyd C. Litt, Wei Wu, Patrick Montgomery, Bernard J. Roman, Bryan S. Kasprowicz, Christopher J. Progler, Robert John Socha, Douglas J. Van Den Broeke, Erika Schaefer, Pat Cook

Author Affiliations +

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.537619
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Each generation of semiconductor device technology drive new and interesting resolution enhancement technology (RET’s). The race to smaller and smaller geometry’s has forced device manufacturers to k1’s approaching 0.40. The authors have been investigating the use of Chromeless phase-shifting masks (CPL) exposed with ArF, high numerical aperture (NA), and off-axis illumination (OAI) has been shown to produce production worthy sub-100nm resist patterns with acceptable overlapped process window across feature pitch. These new reticle technologies have many issues that are similar to simple binary masks. The authors have investigated the printability of defects in CPL mask technology. Programmed defects of various sizes and types have been simulated and printed for sub 100nm imaging. High resolution scanning electron microscopy has been used to characterize these defects and develop an understanding of size and type that prints. In this paper the authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. The authors have built a number of test structures that require superior 2D control for SRAM gate structures. Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds.

Citation Download Citation

Jan-Pieter Kuijten, Arjan Verhappen, Wil Pijnenburg, Will Conley, Lloyd C. Litt, Wei Wu, Patrick Montgomery, Bernard J. Roman, Bryan S. Kasprowicz, Christopher J. Progler, Robert John Socha, Douglas J. Van Den Broeke, Erika Schaefer, and Pat Cook "Defect printability in CPL mask technology", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.537619

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photomasks

Resolution enhancement technologies

Reticles

Manufacturing

Scanning electron microscopy

Binary data

Phase shifts

Show All Keywords

Keywords/Phrases

Search In:

Publication Years