Test of a new sub-90-nm DR overlay mark for DRAM production

Stefan Gruss; Ansgar Teipel; Carsten Fuelber; Elyakim Kassel; Mike Adel; Mark Ghinovker; Pavel Izikson

doi:10.1117/12.534518

24 May 2004 Test of a new sub-90-nm DR overlay mark for DRAM production

Stefan Gruss, Ansgar Teipel, Carsten Fuelber, Elyakim Kassel, Mike Adel, Mark Ghinovker, Pavel Izikson

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.534518
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

An improved overlay mark design was applied in high end semiconductor manufacturing to increase the total overlay measurement accuracy with respect to the standard box-in-box target. A comprehensive study has been conducted on the basis of selected front-end and back-end DRAM layers (short loop) to characterize contributors to overlay error. This analysis is necessary to keep within shrinking overlay budget requirements.

Citation Download Citation

Stefan Gruss, Ansgar Teipel, Carsten Fuelber, Elyakim Kassel, Mike Adel, Mark Ghinovker, and Pavel Izikson "Test of a new sub-90-nm DR overlay mark for DRAM production", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.534518

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