Inspection performances of the electron beam inspection system based on projection electron microscopy

Ichirota Nagahama; Atsushi Onishi; Yuichiro Yamazaki; Tohru Satake; Nobuharu Noji

doi:10.1117/12.534909

24 May 2004 Inspection performances of the electron beam inspection system based on projection electron microscopy

Ichirota Nagahama, Atsushi Onishi, Yuichiro Yamazaki, Tohru Satake, Nobuharu Noji

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.534909
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The production prototype of an electron beam inspection system based on projection electron microscopy (EBI-PEM) has been developed. Inspection performances of the EBI-PEM were evaluated using the programmed defect standard wafer delivered by SELETE. We confirmed the EBI-PEM had the same inspection speed, 9 cm²/h, as the conventional electron beam inspection system based on scanning electron microscopy (EBI-SEM) under the following conditions: pixel size of 50 nm and defect capture rate of more than 80%. Furthermore, the EBI-PEM achieved an inspection speed of 36 cm²/h. This inspection speed is four times higher than that of the EBI-SEM. The EBI-PEM would be an effective tool for inspection subsequent to the 90 nm technology node generation.

Citation Download Citation

Ichirota Nagahama, Atsushi Onishi, Yuichiro Yamazaki, Tohru Satake, and Nobuharu Noji "Inspection performances of the electron beam inspection system based on projection electron microscopy", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.534909

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