Electron beam inspection system for semiconductor wafer based on projection electron microscopy

Tohru Satake; Nobuharu Noji; Takeshi Murakami; Manabu Tsujimura; Ichirota Nagahama; Yuichiro Yamazaki; Atsushi Onishi

doi:10.1117/12.536202

24 May 2004 Electron beam inspection system for semiconductor wafer based on projection electron microscopy

Tohru Satake, Nobuharu Noji, Takeshi Murakami, Manabu Tsujimura, Ichirota Nagahama, Yuichiro Yamazaki, Atsushi Onishi

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.536202
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Optical inspection systems and/or electron beam inspection systems are quite useful tools for the yield management in the semiconductor process. However, they have some issues of difficulties for the application to the yield management after 100nm-technology node generation. Optical inspection systems have a resolution limit by diffraction phenomena. On the other hand, electron beam inspection systems based on scanning electron microscopy (EBI-SEM) have the limit of inspection speed. Both limits are serious matter for the application to yield management after 100nm-technology node generation. We have developed the electron beam inspection system based on projection electron microscopy (EBI-PEM), having both performances of inspection speed of optical types and spatial resolution of EBI-SEM. The system has been improved on the signal electron collection efficiency and transmittance of the electron optical system. We also have developed high rate and sensitive signal detection system. Then we considered that the inspection speed of several times faster than the conventional EBI-SEM is feasible at the spatial resolution less than 100nm.

Citation Download Citation

Tohru Satake, Nobuharu Noji, Takeshi Murakami, Manabu Tsujimura, Ichirota Nagahama, Yuichiro Yamazaki, and Atsushi Onishi "Electron beam inspection system for semiconductor wafer based on projection electron microscopy", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.536202

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