Defect learning with 193-nm resists

Iris Maege; Beatrix Pinter; Martin Tuckermann; Oreste Donzella

doi:10.1117/12.534055

24 May 2004 Defect learning with 193-nm resists

Iris Maege, Beatrix Pinter, Martin Tuckermann, Oreste Donzella

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.534055
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

New photoresist chemistries, new process equipment, smaller design pitches and shrinking process windows all pose new challenges to resist and lithography process quality control. Controlling 193-nm resist defectivity is particluarly challenging, since the size of potential yield-critical defects shrinks in relative proportion to the size of the pitch. Standard defect density control strategies -- which involve taking liquid particle measurements of the resist at the vendor site, as well as inspecting unpatterned wafers coated with the resist -- are insufficient in identifying critical defect issues with 193-nm resists. Thus, they can no longer meet the advanced quality requirements of IC manufacturers. In this paper, we discuss a successful defect reduction project implemented at Infineon Technologies Dresden involving several resist vendors and the use of high-resolution inspection on patterned wafers. The importance of defect control on patterned wafers in addition to standard quality checks was clearly demonstrated. Based on the results presented in this paper, we believe that resist vendors should establish a defect control methodology that uses patterned wafers as a criterion for resist development and to ensure quality control.

Citation Download Citation

Iris Maege, Beatrix Pinter, Martin Tuckermann, and Oreste Donzella "Defect learning with 193-nm resists", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.534055

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