Contact hole edge roughness: circles vs. stars

Andrew Habermas; Qingyou Lu; David Chase-Colin; Michael Har-Zvi; Aviram Tam; Omer Sagi

doi:10.1117/12.537537

24 May 2004 Contact hole edge roughness: circles vs. stars

Andrew Habermas, Qingyou Lu, David Chase-Colin, Michael Har-Zvi, Aviram Tam, Omer Sagi

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.537537
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The edge roughness of straight lines has received intense focus in the past, whereas the edge roughness of contact holes has been relatively unexplored. Reductions in contact hole roughness can be shown to offer improvements in electrical breakdown voltages, or potentially the opportunity for reduced cellsize. This paper introduces two CD-SEM algorithms for characterizing the amplitude and frequency of contact hole edge roughness. When combined, these two metrics proved capable of detecting differences within four wafer pairs with varying dimension and processing. Increased roughness amplitude was shown to correlate to electrical breakdown failures.

Citation Download Citation

Andrew Habermas, Qingyou Lu, David Chase-Colin, Michael Har-Zvi, Aviram Tam, and Omer Sagi "Contact hole edge roughness: circles vs. stars", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.537537

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