Characterizing SiOx Ny ARC materials with laser ellipsometry and DUV reflectometry

Gary Guangbin Jiang; Timothy Sun; Donald Pelcher; Jana Clerico; Jui-Ping Li; Yi-Ru Chen

doi:10.1117/12.535264

24 May 2004 Characterizing SiO_xN_y ARC materials with laser ellipsometry and DUV reflectometry

Gary Guangbin Jiang, Timothy Sun, Donald Pelcher, Jana Clerico, Jui-Ping Li, Yi-Ru Chen

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.535264
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

SiO_XN_YARCs are critical for maintaining CD control in current and future generations of designs. However, even minor fluctuations in t, n, and k across the wafer, or from wafer to wafer, can have a significant impact on ARC performance. For process control of ARC deposition, metrology tools must be able to reproducibly measure thickness and optical properties to 6 σ, translating into 1.5 Å for a nominally 500 Å SiO_XN_YARC and 0.0015 for index. A combination of laser ellipsometry and DUV reflectometry has demonstrated the ability to meet these requirements, with two tool-matching results of 0.8 Å for thickness and 0.001 for index. The accuracy of the thickness measurements was further tested at SiO_XN_YARC films were etched to clear. TEM confirmation of thickness measurements demonstrated the metrology was accurate with films as thin as 75 Å. The metrology method was subsequently used to monitor both the thickness and reflectivity at 49-points across a wafer at various etch times until the film was thinner than 25 Å.

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Gary Guangbin Jiang, Timothy Sun, Donald Pelcher, Jana Clerico, Jui-Ping Li, and Yi-Ru Chen "Characterizing SiO_xN_y ARC materials with laser ellipsometry and DUV reflectometry", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.535264

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KEYWORDS

Etching

Metrology

Reflectivity

Deep ultraviolet

Reflectometry

Transmission electron microscopy

Semiconducting wafers

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