EUV wavefront metrology system in EUVA

Takayuki Hasegawa; Chidane Ouchi; Masanobu Hasegawa; Seima Kato; Akiyoshi Suzuki; Katsumi Sugisaki; Katsuhiko Murakami; Jun Saito; Masahito Niibe

doi:10.1117/12.536327

20 May 2004 EUV wavefront metrology system in EUVA

Takayuki Hasegawa, Chidane Ouchi, Masanobu Hasegawa, Seima Kato, Akiyoshi Suzuki, Katsumi Sugisaki, Katsuhiko Murakami, Jun Saito, Masahito Niibe

Author Affiliations +

Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004) https://doi.org/10.1117/12.536327
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

An Experimental extreme ultraviolet (EUV) interferometer (EEI) using an undulator as a light source was installed in New SUBARU synchrotron facility at Himeji Institute of Technology (HIT). The EEI can evaluate the five metrology methods reported before. (1) A purpose of the EEI is to determine the most suitable method for measuring the projection optics of EUV lithography systems for mass production tools.

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Takayuki Hasegawa, Chidane Ouchi, Masanobu Hasegawa, Seima Kato, Akiyoshi Suzuki, Katsumi Sugisaki, Katsuhiko Murakami, Jun Saito, and Masahito Niibe "EUV wavefront metrology system in EUVA", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.536327

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