Thermal annealing effect on InGaAsN/GaAs lasers

Changsi Peng; Janne Konttinen; Suvi Karirinne; Tomi Jouhti; Hongfei Liu; Markus Pessa

doi:10.1117/12.529120

11 May 2004 Thermal annealing effect on InGaAsN/GaAs lasers

Changsi Peng, Janne Konttinen, Suvi Karirinne, Tomi Jouhti, Hongfei Liu, Markus Pessa

Proceedings Volume 5365, Novel In-Plane Semiconductor Lasers III; (2004) https://doi.org/10.1117/12.529120
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Before processing the InGaAsN/GaAs edge emitting lasers, post-growth rapid thermal annealing (RTA) was applied on the wafer. Different RTA results in different threshold current density (J_th). RTA at 720°C reduces the J_th significantly but keeps the linear fit slope of J_th vs 1/L (L is the cavity length). It indicates that RTA at 720°C can decrease the absorption losses. High temperature RTA at 890°C can dramatically decrease the linear fit slope, which indicates that the carrier conductivity is improved dramatically even the RTA time is only one second.

Citation Download Citation

Changsi Peng, Janne Konttinen, Suvi Karirinne, Tomi Jouhti, Hongfei Liu, and Markus Pessa "Thermal annealing effect on InGaAsN/GaAs lasers", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.529120

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