Growth of deep-UV light-emitting diodes by metalorganic chemical vapor deposition

Alireza Yasan; Ryan McClintock; Kathryn Alissa Mayes; Derek James Shiell; Shaban Ramezani Darvish; Patrick Kung; Manijeh Razeghi

doi:10.1117/12.529343

6 July 2004 Growth of deep-UV light-emitting diodes by metalorganic chemical vapor deposition

Alireza Yasan, Ryan McClintock, Kathryn Alissa Mayes, Derek James Shiell, Shaban Ramezani Darvish, Patrick Kung, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 5359, Quantum Sensing and Nanophotonic Devices; (2004) https://doi.org/10.1117/12.529343
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We demonstrate high power AlGaN based ultraviolet light-emitting diodes (UV LEDs) with an emission wavelength of 280 nm using an asymmetric single quantum well active layer configuration on top of a high-quality AlGaN/AlN template layer grown by metalorganic chemical vapor deposition (MOCVD). An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 μm × 300 μm diode. This device reached a high peak external quantum efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current. We also demonstrate high output power operation of AlGaN-based UV LEDs at a short wavelength of 265 nm. An output power of 2.4 mW at a pulsed current of 360 mA was achieved for a single diode. A packaged array of four diodes produced 5.3 mW at 700 mA of pulsed current. The DC output power is 170 μW at 250 mA.

Citation Download Citation

Alireza Yasan, Ryan McClintock, Kathryn Alissa Mayes, Derek James Shiell, Shaban Ramezani Darvish, Patrick Kung, and Manijeh Razeghi "Growth of deep-UV light-emitting diodes by metalorganic chemical vapor deposition", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.529343

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